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INTEGRATED CIRCUITS
DATA SHEET
TEA1118; TEA1118A Versatile cordless transmisssion circuit
Product specification Supersedes data of 1996 Nov 26 File under Integrated Circuits, IC03 1997 Jul 14
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
FEATURES * Low DC line voltage; operates down to 1.6 V (excluding polarity guard) * Voltage regulator with adjustable DC voltage * Provides a supply for external circuits * Symmetrical high impedance transmit inputs (62.5 k) with large signals handling capabilities [up to 1 V (RMS value) with less than 2% THD] * Receive amplifier for dynamic, magnetic or piezoelectric earpieces * AGC line loss compensation for transmit and earpiece amplifiers * DTMF input with confidence tone (TEA1118A only) * MUTE input for pulse or DTMF dialling (TEA1118A only) * Transmit mute function, also enabling the DTMF input (TEA1118A only). APPLICATIONS * Cordless telephone base stations * Fax machines * Answering machines.
TEA1118; TEA1118A
GENERAL DESCRIPTION The TEA1118 and TEA1118A are bipolar integrated circuits that perform all speech and line interface functions required in cordless telephone base stations. The ICs operate at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. The TEA1118A offers in addition to the TEA1118 electronic switching between speech and dialling. Moreover the transmit amplifier can be disabled during speech condition by means of a transmit mute function. All statements and values refer to all versions unless otherwise specified.
QUICK REFERENCE DATA Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL Iline VLN ICC VCC Gvtrx PARAMETER line current operating range DC line voltage internal current consumption supply voltage for peripherals typical voltage gain range transmit amplifier (TEA1118A only) VTX = 200 mV (RMS) transmit amplifier (TEA1118 only) receive amplifier Gvtrx gain control range for transmit and receive amplifiers with respect to Iline = 15 mA VTX = 200 mV (RMS) VIR = 4 mV (RMS) Iline = 75 mA - 5.3 19 - - - - 5.8 11.3 11.3 31 - dB dB dB dB VCC = 2.9 V IP = 0 mA CONDITIONS normal operation with reduced performance 1 3.35 - - MIN. 11 - - 3.65 1.15 2.9 TYP. MAX. 140 11 3.95 1.4 - UNIT mA mA V mA V
1997 Jul 14
2
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
ORDERING INFORMATION TYPE NUMBER TEA1118M TEA1118T TEA1118AM TEA1118AT PACKAGE NAME SSOP16 SO14 SSOP16 SO14 DESCRIPTION
TEA1118; TEA1118A
VERSION SOT369-1 SOT108-1 SOT369-1 SOT108-1
plastic shrink small outline package; 16 leads; body width 4.4 mm plastic small outline package; 14 leads; body width 3.9 mm plastic shrink small outline package; 16 leads; body width 4.4 mm plastic small outline package; 14 leads; body width 3.9 mm
BLOCK DIAGRAMS
handbook, full pagewidth
GAR
QR
VCC IR
V->I
LN CURRENT REFERENCE TX+
V->I
GAT REG
TX-
AGC CIRCUIT
TEA1118M TEA1118T
LOW VOLTAGE CIRCUIT
MBH273
VEE
SLPE AGC
Fig.1 Block diagram (TEA1118).
1997 Jul 14
3
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
GAR
handbook, full pagewidth
QR
MUTE
IR
V->I
VCC
V->I
LN DTMF ATTENUATOR
V->I
CURRENT REFERENCE
TX+
V->I
REG
TX-
TMUTE
TRANSMIT MUTE
AGC CIRCUIT
TEA1118AM TEA1118AT
LOW VOLTAGE CIRCUIT
MBH272
VEE
SLPE AGC
Fig.2 Block diagram (TEA1118A).
1997 Jul 14
4
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
PINNING TEA1118 SYMBOL SO14 LN SLPE REG GAT TMUTE DTMF MUTE IR AGC TX- TX+ VEE QR GAR VCC n.c. 1 2 3 4 - - - 7 8 9 10 11 12 13 14 5 and 6 SSOP16 1 2 3 4 - - - 9 10 11 12 13 14 15 16 5 to 8 SO14 1 2 3 - 4 5 6 7 8 9 10 11 12 13 14 - SSOP16 1 2 3 - 5 6 8 9 10 11 12 13 14 15 16 4 and 7 positive line terminal TEA1118A
TEA1118; TEA1118A
DESCRIPTION
slope (DC resistance) adjustment line voltage regulator decoupling transmit gain adjustment transmit mute input dual-tone multi-frequency input mute input to select speech or dialling mode receive amplifier input automatic gain control/line loss compensation inverting transmit amplifier input non-inverting transmit amplifier input negative line terminal receive amplifier output receive gain adjustment supply voltage for speech circuit and peripherals not connected
1997 Jul 14
5
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
handbook, halfpage
LN 1
handbook, halfpage
16 VCC 15 GAR 14 QR 13 VEE
LN SLPE REG GAT n.c. n.c. IR
1 2 3 4 5 6 7
MBH269
14 VCC 13 GAR 12 QR
SLPE 2 REG 3 GAT 4
TEA1118M TEA1118T 11 VEE
10 TX+ 9 8 TX- AGC n.c. 5 n.c. 6 n.c. 7 n.c. 8
MBH268
12 TX+ 11 TX- 10 AGC 9 IR
Fig.3 Pin configuration (TEA1118T).
Fig.4 Pin configuration (TEA1118M).
handbook, halfpage
LN 1
handbook, halfpage
16 VCC 15 GAR 14 QR 13 VEE
LN SLPE REG TMUTE DTMF MUTE IR
1 2 3 4 5 6 7
MBH271
14 VCC 13 GAR 12 QR
SLPE 2 REG 3 n.c. 4
TEA1118AM TEA1118AT 11 VEE
10 TX+ 9 8 TX- AGC TMUTE 5 DTMF 6 n.c. 7 MUTE 8
MBH270
12 TX+ 11 TX- 10 AGC 9 IR
Fig.5 Pin configuration (TEA1118AT).
Fig.6 Pin configuration (TEA1118AM).
1997 Jul 14
6
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supplies (pins LN, SLPE, VCC and REG) The supply for the TEA1118 and TEA1118A and their peripherals is obtained from the telephone line. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.35 V, is temperature compensated and can be adjusted by means of an external resistor (RVA). It can be increased by connecting the RVA resistor between pins REG and SLPE (see Fig.11), or decreased by connecting the RVA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (CREG) which is connected to VEE. This capacitor, converted into an equivalent inductance (see Section "Set impedance"), realizes the set impedance conversion from its DC value (RSLPE) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 7 illustrates the supply configuration. The ICs regulate the line voltage at pin LN, and it can be calculated as follows: VLN = Vref + RSLPE x ISLPE ISLPE = Iline - ICC - IP - I* = Ish where: Iline: line current ICC: current consumption of the IC IP: supply current for peripheral circuits I*: current consumed between LN and VEE Ish: the excess line current shunted to SLPE (and VEE) via LN. The preferred value for RSLPE is 20 . Changing RSLPE will affect more than the DC characteristics; it also influences the transmit gain and the DTMF gain (TEA1118A only), the gain control characteristics, the sidetone level and the maximum output swing on the line. The internal circuitry of the TEA1118 and TEA1118A is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (RCC) and must be decoupled by a capacitor CVCC. It may also be used to supply peripheral circuits such as dialling or control circuits. The VCC voltage depends on the current consumed by the IC and the peripheral circuits as shown
TEA1118; TEA1118A
by the formula (see also Figs 8 and 9). RCCint is the internal equivalent resistance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. VCC = VCC0 - RCCint x (IP - Irec) VCC0 = VLN - RCC x ICC The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 7.5 mA, the internal reference voltage (generating Vref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited transmit and receive levels. This is called the low voltage area. Set impedance In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuits is illustrated in Fig.10. Transmit amplifier (pins TX+, TX- and GAT) The TEA1118 and TEA1118A have symmetrical transmit inputs. The input impedance between pins TX+ and TX- is equal to 62.5 k; the input impedance between pins TX+/TX- and VEE is equal 36.5 k. The voltage gain from pins TX+/TX- to pin LN is set at 11.3 dB. Automatic gain control is provided on this amplifier for line loss compensation. The gain of the TEA1118 can be decreased by connecting an external resistor RGAT between pins GAT and REG. The adjustment range is equal to 6 dB. A capacitor CGAT connected between pins GAT and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAT x (RGATint // RGAT). RGATint is the internal resistor which sets the gain with a typical value of 27 k. Transmit mute (pin TMUTE; TEA1118A only) The transmit amplifier can be disabled by activating the transmit mute function. When TMUTE is LOW, the normal speech mode is entered, depending on the level on MUTE. When TMUTE is HIGH, the transmit amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and TX+/TX- is attenuated; the gain reduction is 80 dB.
1997 Jul 14
7
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
Receive amplifier (pins IR, GAR and QR) The receive amplifier has one input (IR) and one output (QR). The input impedance between pins IR and VEE is 20 k. The voltage gain from pin IR to pin QR is set at 31 dB. The gain can be decreased by connecting an external resistor RGAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE) ensure stability.
TEA1118; TEA1118A
The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR x (RGARint // RGAR). RGARint is the internal resistor which sets the gain with a typical value of 100 k. The condition CGARS = 10 x CGAR must be fulfilled to ensure stability. Automatic gain control is provided on this amplifier for line loss compensation.
handbook, full pagewidth
Rline Iline
RCC 619 LN from preamp ICC Ish I* CVCC 100 F peripheral circuits VCC
TEA1118 TEA1118A
Rexch
Ip
Vexch SLPE ISLPE RSLPE 20 REG CREG 4.7 F
MBH274
VEE
Fig.7 Supply configuration.
1997 Jul 14
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Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
handbook, halfpage
2.5
MBE783
IP (mA) 2
1.5
handbook, halfpage
RCCint
VCC
1 VCCO 0.5 (2) (1)
MBE792
Irec
PERIPHERAL CIRCUIT
IP
VEE 0 0 1 2 3 VCC (V) 4
(1) With RVA resistor. (2) Without RVA resistor.
Fig.8
Typical current IP available from VCC for peripheral circuits at Iline = 15 mA.
Fig.9 VCC voltage supply for peripheral.
MGD176
handbook, halfpage
6.0
Vref (V)
handbook, halfpage
LN RP REG CREG 4.7 F RCC 619 VCC CVCC 4.0
(1) (2)
5.0
LEQ Vref SLPE RSLPE 20 VEE
100 F
MBE788
3.0 104
105
106
RVA ()
107
LEQ = CREG x RSLPE x RP. RP = internal resistance (15.5 k).
(1) Influence of RVA on Vref. (2) Vref without influence of RVA.
Fig.10 Equivalent impedance between LN and VEE.
Fig.11 Reference voltage adjustment by RVA.
1997 Jul 14
9
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
Automatic Gain Control (pin AGC) The TEA1118 and TEA1118A perform automatic line loss compensation. The automatic gain control varies the gain of the transmit amplifier and the gain of the receive amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 /km and an average attenuation of 1.2 dB/km). The ICs can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor RAGC between pins AGC and VEE. This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit. DTMF amplifier (pin DTMF; TEA1118A only) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). The TEA1118A has an asymmetrical DTMF input. The input impedance between DTMF and VEE is 20 k. The voltage gain from pin DTMF to pin LN is 17.4 dB. The automatic gain control has no effect on the DTMF amplifier. Mute function (pin MUTE; TEA1118A only) The mute function performs the switching action between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the transmit and receive amplifiers inputs are enabled while the DTMF input is disabled, depending on the TMUTE level. When MUTE is HIGH, the DTMF input is enabled and the transmit and receive amplifiers inputs are disabled. Sidetone suppression
TEA1118; TEA1118A
The TEA1118 and TEA1118A anti-sidetone network comprising RCC//Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.12) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: R SLPE x R ast1 = R CC x ( R ast2 + R ast3 ) [ R ast2 x ( R ast3 + R SLPE ) ] k = ---------------------------------------------------------------------( R ast1 x R SLPE ) Z bal = k x Z line The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Zbal. In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. The anti-sidetone network for the TEA1118 and TEA1118A (as shown in Fig.16) attenuates the receive signal from the line by 32 dB before it enters the receive amplifier. The attenuation is almost constant over the whole audio frequency range. A Wheatstone bridge configuration (see Fig.13) may also be used. More information on the balancing of an anti-sidetone bridge can be obtained in our publication "Applications Handbook for Wired Telecom Systems, IC03b", order number 9397 750 00811.
MUTE and TMUTE levels for different modes (TEA1118A only) Table 1 Required MUTE and TMUTE levels to enable the different possible modes CHANNEL MODE TRANSMIT Speech DTMF dialling Transmit mute Note 1. X = don't care. 1997 Jul 14 10 on off off RECEIVE on off on DTMF off on on CONFIDENCE TONE off on off MUTE LOW HIGH LOW TMUTE LOW X(1) HIGH
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
handbook, full pagewidth
LN
Zline
RCC
Rast1
VEE
Im
IR Zir Rast2
RSLPE Rast3 SLPE Zbal
MBE787
Fig.12 Equivalent circuit of TEA1118 and TEA1118A family anti-sidetone bridge.
handbook, full pagewidth
LN
Zline
RCC
Zbal
VEE
Im
IR Zir
RSLPE
Rast1 RA SLPE
MBE786
Fig.13 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
1997 Jul 14
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Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption Vn(max) Iline Ptot maximum voltage on all pins line current total power dissipation TEA1118T; TEA1118AT TEA1118M; TEA1118AM Tstg Tamb HANDLING IC storage temperature operating ambient temperature RSLPE = 20 ; see Figs 14 and 15 Tamb = 75 C; see Figs 14 and 15 CONDITIONS
TEA1118; TEA1118A
MIN. VEE - 0.4 VEE - 0.4 VEE - 0.4 - 12
MAX. 13.2 VCC + 0.4 140
UNIT V V V mA
- - -40 -25
384 312 +125 +75
mW mW C C
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with "MIL STD 883C - method 3015". THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air TEA1118T; TEA1118AT TEA1118M; TEA1118AM mounted on epoxy board 40.1 x 19.1 x 1.5 mm 130 160 K/W K/W CONDITIONS VALUE UNIT
1997 Jul 14
12
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
MBH275
MBH276
handbook, halfpage
150
I line (mA)
handbook, halfpage I
160 line (mA) 140 120
130
110 (1) 90 (2) 80 (3) 70 (4) 60 40 20 2 4 6 8 10 12 V LN V SLPE (V) (1) (2) (3) (4) 2 4 6 8 10 12 V LN V SLPE (V) 100
(1) (2) (3) (4)
50
30
(1) (2) (3) (4)
Tamb = 45 C; Ptot = 615 mW. Tamb = 55 C; Ptot = 538 mW. Tamb = 65 C; Ptot = 461 mW. Tamb = 75 C; Ptot = 384 mW.
Tamb = 45 C; Ptot = 500 mW. Tamb = 55 C; Ptot = 437 mW. Tamb = 65 C; Ptot = 375 mW. Tamb = 75 C; Ptot = 312 mW.
Fig.14 SO14 safe operating area.
Fig.15 SSOP16 safe operating area.
CHARACTERISTICS Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies (pins VLN, VCC, SLPE and REG) Vref VLN stabilized voltage between LN and SLPE DC line voltage Iline = 1 mA Iline = 4 mA Iline = 15 mA Iline = 140 mA VLN(exR) VLN(T) ICC VCC RCCint DC line voltage with an external resistor RVA DC line voltage variation with temperature referenced to 25 C internal current consumption supply voltage for peripherals equivalent supply voltage resistance RVA(SLPE-REG) = 27 k Tamb = -25 to +75 C VCC = 2.9 V IP = 0 mA IP = 0.5 mA 3.1 - - 3.35 - - - - - - 3.35 1.6 2.45 3.65 - 4.4 30 1.15 2.9 550 3.6 - - 3.95 6.9 - - 1.4 - 620 V V V V V V mV mA V
1997 Jul 14
13
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SYMBOL Zi
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Transmit amplifier (pins TX+, TX- and GAT) input impedance differential between pins TX+ and TX- single-ended between pins TX+/TX- and VEE Gvtx Gvtx(f) Gvtx(T) CMRR Gvtxr VLN(max) VTX(max) Vnotx voltage gain from TX+/TX- to LN gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C common mode rejection ratio gain voltage reduction range (TEA1118 only) maximum sending signal (RMS value) maximum transmit input voltage (RMS value) noise output voltage at pin LN; pins TX+/TX- shorted through 200 external resistor connected between GAT and REG Iline = 15 mA; THD = 2% Iline = 4 mA; THD = 10% Iline = 15 mA; THD = 2% Iline = 75 mA; THD = 2% psophometrically weighted (P53 curve) VTX = 200 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C - - 10.1 - - - - 1.4 - - - - 62.5 36.5 11.3 0.2 0.3 60 - 1.7 0.8 0.45 0.9 -84 - - 12.5 - - - 6 - - - - - k k dB dB dB dB dB V V V V dBmp
Transmit mute (pin TMUTE; TEA1118A only) Gvtxm VIL VIH ITMUTE Zi Gvrx Gvrx(f) Gvrx(T) Gvrxr Vo(rms) gain reduction LOW level input voltage HIGH level input voltage input current input level = HIGH TMUTE = HIGH - 80 - dB VEE - 0.4 - VEE + 1.5 - - - VIR = 4 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C external resistor connected between GAR and QR IP = 0 mA sine wave drive; RL = 150 ; THD = 2% IP = 0 mA sine wave drive; RL = 450 ; THD = 2% Vnorx(rms) noise output voltage at pin QR (RMS value) TEA1118 TEA1118A IR open-circuit; RL = 150 ; psophometrically weighted (P53 curve) 29.8 - - - - - 1.25 VEE + 0.3 V VCC + 0.4 V 3 - 32.2 - - 12 - - A
Receive amplifier (pins IR, QR and GAR) input impedance voltage gain from IR to QR gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C gain voltage reduction range maximum receive signal (RMS value) 20 31 0.2 0.3 - 0.25 0.35 k dB dB dB dB V V
- -
-89 -86
- -
dBVp dBVp
1997 Jul 14
14
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SYMBOL Gvtrx
PARAMETER
CONDITIONS -
MIN.
TYP. -
MAX.
UNIT
Automatic gain control (pin AGC) gain control range for transmit and receive amplifiers with respect to Iline = 15 mA highest line current for maximum gain lowest line current for minimum gain Iline = 75 mA; 5.8 dB
Istart Istop Zi Gvdtmf Gvdtmf(f) Gvdtmf(T) Gvct
- - - VDTMF = 100 mV (RMS); MUTE or TMUTE = HIGH f = 300 to 3400 Hz Tamb = -25 to + 75 C VDTMF = 100 mV (RMS); RL = 150 16.2 - - -
26 61
- - - 18.6 - - -
mA mA
DTMF amplifier (pin DTMF; TEA1118A only) input impedance voltage gain from DTMF to LN gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C voltage gain from DTMF to QR (confidence tone) 20 17.4 0.2 0.4 -18 k dB dB dB dB
Mute function (pin MUTE; TEA1118A only) VIL VIH IMUTE Gtrxm LOW level input voltage HIGH level input voltage input current gain reduction for transmit and receive amplifiers input level = HIGH MUTE = HIGH VEE - 0.4 - VEE + 1.5 - - - 1.25 80 VEE + 0.3 V VCC + 0.4 V 3 - A dB
1997 Jul 14
15
ok, full pagewidth
1997 Jul 14
Rast1 130 k CIR IR QR CGAR 100 pF
(2)
Philips Semiconductors
APPLICATION INFORMATION
Rprot 10 LN VCC RCC 619
a/b
95 V Rast2 3.92 k
4x BAS11
V
telephone line
TEA1118
GAR TX+
TEA1118A
(2)
DTMF MUTE BC558 470 k Rpd4
Rpd5 470 k
CGARS TMUTE CVCC supply for peripheral circuits 1 nF Rast3 390 Zbal 4.7 F RSLPE 20 CREG BF473 SLPE 100 F GAT
(1)
(2)
signal from dial and control circuits
TX- REG AGC VEE
b/a
BZX79C12
Versatile cordless transmisssion circuit
16
Rpd1 470 k BC547 BZX79C10 Rpd2 470 k
Rpd6 BC547 68 k
PD input
BSN254
Rlimit
Rpd3 1 M
MBH277
3.9
(1) TEA1118 only. (2) TEA1118A only.
TEA1118; TEA1118A
Product specification
Fig.16 Typical application of the TEA1118 and TEA1118A in sets with pulse dialling or flash facilities.
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
PACKAGE OUTLINES SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
TEA1118; TEA1118A
SOT369-1
D
E
A X
c y HE vM A
Z
16
9
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
8
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0.00 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.25 0.13 D (1) 5.30 5.10 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT369-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 94-04-20 95-02-04
1997 Jul 14
17
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A X
c y HE vMA
Z 14 8
Q A2 A1 pin 1 index Lp 1 e bp 7 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 8.75 8.55 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
inches 0.069
0.010 0.057 0.004 0.049
0.019 0.0100 0.35 0.014 0.0075 0.34
0.244 0.039 0.041 0.228 0.016
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT108-1 REFERENCES IEC 076E06S JEDEC MS-012AB EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-23 97-05-22
1997 Jul 14
18
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO and SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering SO Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. SSOP
TEA1118; TEA1118A
Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). METHOD (SO AND SSOP) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Jul 14
19
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1118; TEA1118A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 14
20
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
NOTES
TEA1118; TEA1118A
1997 Jul 14
21
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
NOTES
TEA1118; TEA1118A
1997 Jul 14
22
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
NOTES
TEA1118; TEA1118A
1997 Jul 14
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/03/pp24
Date of release: 1997 Jul 14
Document order number:
9397 750 02613

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